Abstract: We present a novel charge-based compact model for drain current in fin-shaped GaN high-electron-mobility transistors (Fin-HEMTs). A positive threshold voltage shift is observed in Fin-HEMTs ...
Abstract: We report a physics-based surface-potential compact model to describe current-voltage (I-V) relationship in a few-layered ambipolar black phosphorus (BP) transistors. To model the device ...
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